MRF9045NR1 查看數據表（PDF） - Freescale Semiconductor

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MRF9045NR1

RF Power Field Effect Transistor

Freescale Semiconductor 

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

—

IDSS

—

IGSS

—

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 150 μAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 350 mAdc)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 1 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc)

VGS(th)

2

VGS(Q)

3

VDS(on)

—

gfs

—

Dynamic Characteristics

Input Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Ciss

—

Coss

—

Crss

—

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Two - Tone Common - Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

Gps

17

Two - Tone Drain Efficiency

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

η

38

3rd Order Intermodulation Distortion

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IMD

—

Input Return Loss

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IRL

—

Two - Tone Common - Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

Gps

—

Two - Tone Drain Efficiency

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

η

—

3rd Order Intermodulation Distortion

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

IMD

—

Input Return Loss

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

IRL

—

MRF9045NR1

2

Typ

Max

Unit

—

10

μAdc

—

1

μAdc

—

1

μAdc

2.8

4

Vdc

3.7

5

Vdc

0.22

0.4

Vdc

4

—

S

70

—

pF

38

—

pF

1.7

—

pF

19

—

dB

41

—

%

- 31

- 28

dBc

- 14

-9

dB

19

—

dB

41

—

%

- 31

—

dBc

- 13

—

dB

RF Device Data

Freescale Semiconductor

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