MRF9045NR1 查看數據表（PDF） - Freescale Semiconductor

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MRF9045NR1

RF Power Field Effect Transistor

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

70

65

Pin = 1 W

60

55

50

45

Pin = 0.6 W

40

35

30

25

20

Pin = 0.3 W

IDQ = 350 mA

f = 945 MHz

15

Two−Tone Measurement

10

100 kHz Tone Spacing

5

0

22

24

26

28

30

32

VDD, DRAIN VOLTAGE (VOLTS)

Figure 10. Output Voltage versus Supply Voltage

1011

1010

109

108

90 100 110 120 130 140 150 160 170 180 190 200 210

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere2

drain current. Life tests at elevated temperatures have correlated to

better than ±10% of the theoretical prediction for metal failure. Divide

MTTF factor by ID2 for MTTF in a particular application.

Figure 11. MTTF Factor versus Junction Temperature

MRF9045NR1

6

RF Device Data

Freescale Semiconductor

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