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MTY14N100E 查看數據表(PDF) - ON Semiconductor

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MTY14N100E
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MTY14N100E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MTY14N100E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0, ID = 0.250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.250 mAdc)
Threshold Temperature Coefficient (Negative)
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 7.0 Adc)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 14 Adc)
(VGS = 10 Vdc, ID = 7.0 Adc, TJ = 125°C)
Forward Transconductance (VDS 15 Vdc, ID = 7.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 500 Vdc, ID = 14 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 500 Vdc, ID = 14 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 14 Adc, VGS = 0 Vdc)
(IS = 14 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(See Figure 14)
(IS = 14 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
(1) Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min
Typ
1000
1.0
2.0
3.3
9.0
0.67
12.3
10
12
7230
462
61
49
98
132
83
142
34
46
56
1.36
1.26
831
364
467
15.3
4.5
13
Max
Unit
Vdc
V/°C
μAdc
10
100
100
nAdc
Vdc
4.0
mV/°C
0.8
Ohm
Vdc
13.4
11.8
mhos
pF
ns
nC
Vdc
1.5
ns
μC
nH
nH
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