MURS360B 查看數據表（PDF） - WeEn Semiconductors

零件编号

产品描述 (功能)

生产厂家

MURS360B

Ultrafast power diode

WeEn Semiconductors 

MURS360B

Ultrafast power diode

Rev.02 - 1 August 2018

Product data sheet

1. General description

Ultrafast power diode in a SMB surface-mountable plastic package.

2. Features and benefits

• Low on-state loss

• Low leakage current

• Low thermal resistance

• Surface-mountable package

• Reduces switching losses in associated MOSFET or IGBT

3. Applications

•

•

•

Buck and Boost converter

Discontinuous Current Mode (DCM) Power Factor Correction (PFC)

Inverter freewheeling and protection diode

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Absolute maximum rating

Conditions

VRRM

IF(AV)

IFRM

IFSM

repetitive peak reverse

voltage

average forward current

repetitive peak forward

current

non-repetitive peak

forward current

δ = 0.5 ; square-wave pulse; Tlead ≤ 86 °C;

Fig. 1; Fig. 2; Fig. 3

δ = 0.5 ; tp = 25 μs; Tlead ≤ 86 °C;

square-wave pulse

tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;

Fig. 4

tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse;

Symbol Parameter

Conditions

Static characteristics

VF

forward voltage

Dynamic characteristics

IF = 3 A; Tj = 25 °C; Fig. 6

IF = 3 A; Tj = 150 °C; Fig. 6

trr

reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs;

Tj = 25 °C; Fig. 7

Values

Unit

600

V

3

A

6

A

100

A

110

Min Typ

A

Max Unit

-

-

1.3 V

-

0.88 1.05 V

-

50 -

ns

Share Link: