1SS108 查看數據表（PDF） - SUNMATE electronic Co., LTD
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1SS108 Datasheet PDF : 2 Pages
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1SS108
SILICON SCHOTTKY BARRIER DIODE
Features
! Detection efficiency is very good.
! Small temperature coefficient.
! High reliability with glass seal.
Mechanical Data
! Case: DO-35, glass case
! Polarity: Color band denotes cathode
! Weight: 0.004 ounces, 0.13 grams
DO-35(GLASS)
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.165 (4.2)
MAX
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Dimensions in millimeters
Maximum Ratings TA = 25°C unless otherwise specified
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Symbol
VR
IO
Tj
Tstg
Value
30
15
125
–55 to +125
Unit
V
mA
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Forward current
Reverse current
Capacitance
Rectifier efficiency
Symbol Min Typ
IF
3.0
—
IR
—
—
C
—
—
η
70
—
ESD-Capability
—
70
—
Note: Failure criterion; IR ≥ 200µA at VR = 10V
Max
—
100
3.0
—
—
Unit
mA
µA
pF
%
V
Test Condition
VF = 1V
VR = 10V
VR = 1V, f = 1MHz
Vin = 2Vrms, f = 40MHz, RL = 5kΩ, CL
= 20pF
*C = 200pF, Both forward and
reverse direction 1 pulse.
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