M34250M2 查看數據表（PDF） - Renesas Electronics

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M34250M2

SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

Renesas Electronics 

MITSUBISHI MICROCOMPUTERS

4250 Group

SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

ELECTRICAL CHARACTERISTICS

(Ta = –20 °C to 85 °C, VDD = 2.2 V to 5.5 V, unless otherwise noted)

Symbol

Parameter

Test conditions

Limits

Min.

Typ.

VOL

“L” level output voltage

VDD = 5 V IOL = 12 mA

F0, F1, S0–S3, D0, D1, D2/C, D3/K

VDD = 3 V IOL = 6 mA

VOL

“L” level output voltage

VDD = 5 V IOL = 5 mA

G0, G1/TOUT, G2, G3

VDD = 3 V IOL = 2 mA

IIH

“H” level input current

VI = 7 V

F0, F1, S0–S3, D0, D1, RESET

IIH

“H” level input current

VI = VDD

G0/INT, G1, G2, G3, D2/C, D3/K

IIL

“L” level input current

VI = 0 V (Note)

F0, F1, S0–S3, D0, D1, D2/C, D3/K,

G0/INT, G1, G2, G3, RESET

IOZH

Output current at off-state

VO = 7 V

F0, F1, S0–S3, D0, D1

IOZH

Output current at off-state

VO = VDD

G0, G1/TOUT, G2, G3, D2/C, D3/K

IDD

Supply current at active mode

VDD = 5 V f(XIN) = 4.0 MHz

1.5

VDD = 3 V f(XIN) = 1.0 MHz

0.3

at RAM back-up mode

Ta = 25 °C

0.1

VDD = 5 V

VDD = 3 V

RPU

Pull-up transistor

VDD = 5 V, VI = 0 V

5

11

G0/INT, G1, G2, G3, D2/C, D3/K

VT+ – VT– Hysteresis INT

0.3

VT+ – VT– Hysteresis S0–S3

VDD = 5 V

0.1

VT+ – VT– Hysteresis RESET

VDD = 5 V

1.8

VDD = 3 V

0.7

Note: In this case, the pull-up transistors for G0/INT pin and ports G1, G2, G3, D2/C and D3/K are not selected.

Unit

Max.

2

V

0.9

V

2

V

0.9

V

1

µA

1

µA

–1

µA

1

µA

1

µA

5

mA

1

mA

1

µA

10

µA

6

µA

25

kΩ

V

V

V

V

52

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