BFS482 查看數據表（PDF） - Siemens AG
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BFS482 Datasheet PDF : 6 Pages
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NPN Silicon RF Transistor
• For low-noise, high-gain broadband amplifiers
at collector currents from 1mA to 20mA.
• fT = 8GHz
F = 1.2dB at 900MHz
• Two (galvanic) internal isolated
Transistors in one package
BFS 482
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFS 482 RGs
Q62702-F1573
1/4 = B 2/5 = E 3/6 = C
Package
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 81 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point 1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
35
4
250
150
- 65 ... + 150
- 65 ... + 150
≤ 275
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-16-1996
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