BFT46 查看數據表（PDF） - NXP Semiconductors.

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BFT46

N-channel silicon FET

NXP Semiconductors. 

NXP Semiconductors

N-channel silicon FET

Product specification

BFT46

DESCRIPTION

Symmetrical n-channel silicon

epitaxial planar junction field-effect

transistor in a microminiature plastic

envelope. The transistor is intended

for low level general purpose

amplifiers in thick and thin-film

circuits.

PINNING

1 = drain

2 = source

3 = gate

Note : Drain and source are

interchangeable.

handbook, halfpage

3

1

2

Top view

d

g

s

MAM385

Fig.1 Simplified outline and symbol, SOT23.

Marking code

BFT46 = M3p

QUICK REFERENCE DATA

Drain-source voltage

Gate-source voltage (open drain)

Total power dissipation up to Tamb = 40 C

Drain current

VDS = 10 V; VGS = 0

Transfer admittance (common source)

ID = 0,2 mA; VDS = 10 V; f = 1 kHz

Equivalent noise voltage

VDS = 10 V; ID = 200 A; B = 0,6 to 100 Hz

VDS

VGSO

Ptot

IDSS

 yfs 

Vn

max.

max.

max.

25 V

25 V

250 mW



0,2 mA



1,5 mA



0,5 mS



0,5 V

December 1997

2

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