BFT46 查看數據表（PDF） - NXP Semiconductors.

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BFT46

N-channel silicon FET

NXP Semiconductors. 

NXP Semiconductors

N-channel silicon FET

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage

Drain-gate voltage (open source)

Gate-source voltage (open drain)

Drain current

Gate current

Total power dissipation up to Tamb = 40 C(1)

Storage temperature range

Junction temperature

VDS

VDGO

VGSO

ID

IG

Ptot

Tstg

Tj

THERMAL RESISTANCE

From junction to ambient(1)

Note

1. Mounted on a ceramic substrate of 8 mm  10 mm  0,7 mm.

Rth j-a

CHARACTERISTICS

Tj = 25 C unless otherwise specified

Gate cut-off current

VGS = 10 V; VDS = 0

Drain current

VDS = 10 V; VGS = 0

Gate-source voltage

ID = 50 A; VDS = 10 V

Gate-source cut-off voltage

ID = 0,5 nA; VDS = 10 V

y-parameters at f = 1 kHz;

VDS = 10 V; VGS = 0; Tamb = 25 C

Transfer admittance

Output admittance

VDS = 10 V; ID = 200 A; Tamb = 25 C

Transfer admittance

Output admittance

Input capacitance at f = 1 MHz;

VDS = 10 V; VGS = 0; Tamb = 25 C

Feedback capacitance at f = 1 MHz;

VDS = 10 V; VGS = 0; Tamb = 25 C

Equivalent noise voltage

VDS = 10 V; ID = 200 A; Tamb = 25 C

B = 0,6 to 100 Hz

December 1997

3

IGSS

IDSS

VGS

V(P)GS

 yfs

yos

 yfs

 yos

Cis

Crs

Vn

Product specification

BFT46

max. 25 V

max. 25 V

max. 25 V

max. 10 mA

max.

5 mA

max. 250 mW

65 to 150 C

max. 150 C

=

430 K/W



0,2 nA



0,2 mA



1,5 mA



0,1 V



1,0 V



1,2 V



1,0 mS



10 S



0,5 mS



5 S



5 pF



1,5 pF



0,5 V

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