BS250FTA 查看數據表（PDF） - VBsemi Electronics Co.,Ltd

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BS250FTA

P-Channel 60 V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

BS250FTA

P-Channel 60 V (D-S) MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

- 60

3 at VGS = - 10 V

VGS(th) (V)

- 1 to - 3

ID (mA)

-500

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

• High-Side Switching

• Low On-Resistance: 3 

• Low Threshold: - 2 V (typ.)

• Fast Swtiching Speed: 20 ns (typ.)

• Low Input Capacitance: 20 pF (typ.)

• Compliant to RoHS Directive 2002/95/EC

TO-236

(SOT-23)

G1

S2

3D

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Currenta

Pulsed Drain Currentb

Power Dissipationa

Maximum Junction-to-Ambienta

Operating Junction and Storage Temperature Range

TA = 25 °C

TA = 100 °C

TA = 25 °C

TA = 100 °C

VDS

VGS

ID

IDM

PD

RthJA

TJ, Tstg

Notes:

a. Surface mounted on FR4 board.

b. Pulse width limited by maximum junction temperature.

Limit

- 60

± 20

- 500

- 350

-1500

460

240

350

- 55 to 150

Unit

V

mA

mW

°C/W

°C

E-mail：China@VBsemi TEL:86-755-83251052

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