MMSF4N01HDR2 查看數據表（PDF） - Motorola => Freescale

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MMSF4N01HDR2

TMOS Dual N-Channel Field Effect Transistors

Motorola => Freescale 

MMSF4N01HD

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

Zero Gate Voltage Drain Current

(VDS = 12 Vdc, VGS = 0 Vdc)

(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Temperature Coefficient (Negative)

IDSS

—

—

IGSS

—

VGS(th)

0.6

—

Static Drain–Source On–Resistance

(VGS = 4.5 Vdc, ID = 4.0 Adc)

(VGS = 2.7 Vdc, ID = 2.0 Adc)

RDS(on)

—

—

Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)

gFS

3.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 2.7 Vdc,

RG = 2.3 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 6.0 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc,

RG = 2.3 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge

See Figure 8

(VDS = 10 Vdc, ID = 4.0 Adc,

VGS = 4.5 Vdc)

QT

—

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 4.0 Adc, VGS = 0 Vdc)

(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

Reverse Recovery Time

trr

—

(IS = 4.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

tb

—

Reverse Recovery Stored Charge

QRR

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

—

—

2.0

—

mV/°C

µAdc

—

1.0

—

10

—

100

nAdc

0.8

2.8

0.035

0.043

6.0

1.1

—

0.045

0.055

—

Vdc

mV/°C

Ohm

mhos

425

595

pF

270

378

115

230

13

26

ns

60

120

20

40

29

58

10

20

42

84

24

48

28

56

9.2

13

nC

1.3

—

3.5

—

3.0

—

Vdc

0.95

1.1

0.78

—

38

—

ns

17

—

22

—

0.028

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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