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零件编号
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F1070 查看數據表(PDF) - Polyfet RF Devices
零件编号
产品描述 (功能)
生产厂家
F1070
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Polyfet RF Devices
F1070 Datasheet PDF : 2 Pages
1
2
F1070
250
200
150
100
50
0
0
POUT VS PIN GRAPH
F-1070 POUT vs PIN
F=175 MHZ; IDQ=1.6A; VDS=28V
17
GAIN
16
POUT
15
14
Efficiency = 66.67%
13
12
2
4
6
8
10
12
14
16
PIN IN WATTS
IV CURVE
CAPACITANCE VS VOLTAGE
F1B 4DIE CAPACITANCE
1000
Coss
Ciss
100
Crss
10
0
5
10
15
20
25
30
VDS IN VOLTS
ID AND GM VS VGS
30
25
20
15
10
5
0
0
2
Vg = 2V
F1B 4DIE IV CURVE
4
6
Vg = 4V
8
10
12
Vds in Volts
Vg = 6V
Vg = 8V
14
16
Vg = 10V
18
20
Vg = 12V
F1B 4 DIE GM & ID vs VGS
100
Id
10
1
Gm
0.1
0
2
4
6
8
10
12
14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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