FQP3N25 查看數據表（PDF） - Fairchild Semiconductor
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FQP3N25 Datasheet PDF : 8 Pages
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Typical Characteristics
101
Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100 Bottom : 5.5 V
10-1
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
10
8
V = 10V
GS
6
V = 20V
GS
4
2
0
0
1
2
3
4
5
6
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
300
250
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
Ciss
150
Coss
100
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
50
C
rss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
150℃
10-1
10-2
2
25℃
-55℃
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
DS
10
V = 125V
DS
V = 200V
DS
8
6
4
2
※ Note : ID = 2.8 A
0
0
1
2
3
4
5
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, November 2000
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