IRSF3011(1996) 查看數據表（PDF） - International Rectifier

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IRSF3011
(Rev.:1996)

FULLY PROTECTED POWER MOSFET SWITCH

International Rectifier 

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IRSF3011

Application Information

Introduction

Protected monolithic POWER MOSFETs offer simple,

cost effective solutions in applications where extreme oper-

ating conditions can occur. The margin between the

operating conditions and the absolute maximum values can

be narrowed, resulting in better utilization of the device and

lower cost. ESD protection also reduces the off-circuit

failures during handling and assembly.

General Description

The IRSF3011 is a fully protected monolithic N-channel

logic level POWER MOSFET with 200mΩ (max) on-re-

sistance. The built-in protections include over-current,

over-temperature, ESD and over-voltage.

The over-current and over-temperature protections make

the IRSF3011 indestructible under any load conditions in

switching or in linear applications. The built-in ESD pro-

tection minimizes the risk of ESD damage when the device

is off-circuit. The IRSF3011 is fully characterized for ava-

lanche operation and can be used for fast de-energization of

inductive loads.

The TO-220 packaged IRSF3011 offers an easy upgrade

with direct pin-to-pin replacement from non-protected de-

vices.

Block Diagram

As illustrated in figure A1, a zener diode between the input

and the source provides the ESD protection for the input

and also limits the voltage applied to the input to 10V.

Figure A1. Block Diagram

Using higher input voltage will improve the turn-on time but

it will not affect the turn-off switching speed.

The typical waveforms at 7V input voltage are shown in

Figure A3. In typical switching applications (below 60kHz)

the difference in switching losses between the IRSF3011

and the same size standard MOSFET is negligible.

Input voltage 5V/div.

The R-S flip-flop memorizes the occurrence of an error

condition and controls the Q2 and Q3 switches. The flip-

flop can be cleared by holding the input low for the

specified minimum duration.

COMP1 and COMP2 comparators are used to compare the

over-current and over-temperature signals with the built-in

reference. Either comparator can reset the fault flip-flop

and turn Q1 off. During fault condition, Q2 disconnects

the gate of Q1 from the input, and Q3 shorts the gate and

source of Q1, resulting in rapid turn-off of Q1. The zener

diode between the gate and drain of Q1 turns Q1 on when

the drain to source voltage exceeds 55V.

Switching Characteristics

In the IRSF3011, the control logic and the protection cir-

cuits are powered from the input pin. When positive

voltage appears at the input pin, the R-S flip-flop turns Q2

on and connects the gate of the main device to the input.

The turn-on speed is limited by the channel resistance of Q2

and the gate charge requirements of Q1. The typical switch-

ing waveforms at 5V input voltage are shown in Figure A2.

Drain voltage 5V/div.

Drain Current: 1A/div.

Time: 1µsV/div.

Figure A2. Waveforms switching clamped induc-

tive load using 5V input voltage

Over-Current Protection

When the drain current exceeds the preset limit, the protec-

tion circuit resets the internal flip-flop and turns Q1 off.

Normal operation can be restored by holding the input volt-

To Order

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