IRF1324STRL-7PP 查看數據表（PDF） - Infineon Technologies

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IRF1324STRL-7PP

HEXFET® Power MOSFET

Infineon Technologies 

1000

100

TOP

BOTTOM

VGS

15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

10

0.1

4.5V

60µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics

1000

100

TJ = 175°C

10

TJ = 25°C

1

VDS = 15V

60µs PULSE WIDTH

0.1

23456789

VGS, Gate-to-Source Voltage (V)

Fig. 3 Typical Transfer Characteristics

100000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

10000

Ciss

Coss

Crss

1000

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

3

1000

100

IRF1324S-7PPbF

4.5V

TOP

BOTTOM

VGS

15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

10

0.1

60µs PULSE WIDTH

Tj = 175°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 2 Typical Output Characteristics

1.8

ID = 160A

1.6 VGS = 10V

1.4

1.2

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120 140160 180

TJ , Junction Temperature (°C)

Fig. 4 Normalized On-Resistance vs. Temperature

12.0

ID= 75A

10.0

8.0

VDS= 19V

VDS= 12V

6.0

4.0

2.0

0.0

0

50

100

150

200

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

2015-10-15

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