SD263C45S50L 查看數據表（PDF） - Vishay Semiconductors
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SD263C45S50L Datasheet PDF : 9 Pages
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SD263C..S50L Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 375 A
1E4
1E3
1E2
1E 1
1500 1000 400 200 100 50 Hz
2 0 00
3000
4000
6 00 0
10000
SD 263C ..S50L Series
Sinu soid al Pu l se
TC = 5 5° C , V RR M= 1 5 0 0 V
tp
d v/dt = 1000V/us
1E2
1E3
1E 4
Pulse Basew idth (µs)
Fig. 16 - Frequency Characteristics
1E 4
tp
1E 3
1E 2
1E1
100 50 Hz
20 0
400
600
1 00 0
1500
20 0 0
3000
4 00 0
SD 263C ..S50L Series
Tr apezoi dal Pu ls e
TC = 5 5°C, VRRM= 15 00 V
d v/ dt = 10 0 0V / us ,
d i/d t = 300A /us
1E2
1E 3
1E4
Pulse Basewidth ( µs)
Fig. 18 - Frequency Characteristics
1E4
1E3
SD 263C ..S50L Ser ies
T rap ezoid al P uls e
TJ = 1 2 5°C , V RRM = 1 5 0 0 V
tp
d v/dt = 1000V /µ s
d i/d t = 300A /µ s
1 0 jo ule s pe r pu lse
6
4
2
1
0.5
0.3
1E2
1E1
1E 2
1E3
1E4
Pulse Basew idth (µs)
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
SD 263C ..S50L S eri es
T rape z oi dal Pu lse
TJ = 1 2 5°C , VRRM= 1 5 0 0 V
dv/d t = 1000V/µs
di /d t = 100A /µ s
1E3
tp
1 0 jo u le s pe r pu lse
6
4
2
1
0.5
0.3
1E2
1E1
1E 2
1E3
1E4
Pulse Basew idth (µs)
Fig. 19 - Maximum Total Energy Loss
Per Pulse Characteristics
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6
1E 4
tp
1E 3
1E 2
1E1
10 0
600 400 200
1000
1 5 00
2 00 0
50 Hz
3 00 0
4000
6 0 00
SD 2 6 3 C.. S5 0 L Se rie s
T rap e zoi da l Pul se
TC = 5 5°C , V RRM = 1 5 0 0 V
dv/dt = 1000V/u s,
di /d t = 100A / u s
1E2
1E 3
1E4
Pulse Basew idth (µs)
Fig. 20 - Frequency Characteristics
For technical questions, contact: ind-modules@vishay.com
Document Number: 93173
Revision: 14-May-08
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