ST3DV520E 查看數據表（PDF） - STMicroelectronics

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ST3DV520E

MUX/DEMUX for 4 differential channel LVDS and DDC

STMicroelectronics 

ST3DV520E

Figure 3. Diagram for suggested VDD decoupling

Electrical characteristics

C=2uF or

4.7uF

GND 56 55 53 50 49 GND

1

44

VDD 4

GND 6

GND 9

VDD 10

DUT

GND

39

VDD

38

GND 13

GND 16

VDD 18

GND

33

21 24 27 28

Note: 100nF Capacitors must be used as local bypass capacitors between the adjacent VDD and GND pairs (total 7)

1. Applicable for system level ESD test

Figure 4. Test circuit for leakage current (IOFF)

1

Doc ID 18318 Rev 1

9/19

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