STE38NB50 查看數據表（PDF） - STMicroelectronics

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STE38NB50

N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET

STMicroelectronics 

®

STE38NB50

N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP

PowerMESH™ MOSFET

TYPE

VDSS

RDS(on)

ID

STE38NB50

500 V < 0.13 Ω 38 A

s TYPICAL RDS(on) = 0.11 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s ± 30V GATE TO SOURCE VOLTAGE RATING

s 100% AVALANCHE TESTED

s LOW INTRINSIC CAPACITANCE

s GATE CHARGE MINIMIZED

s REDUCED VOLTAGE SPREAD

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, SGS-Thomson has designed an ad-

vanced family of power MOSFETs with outstand-

ing performances. The new patent pending strip

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, exceptional avalanche and

dv/dt capabilities and unrivalled gate charge and

switching characteristics.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLY (SMPS)

s DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY AND MOTOR DRIVE

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

VDGR

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

VGS Gate-source Voltage

ID

Drain Current (continuous) at Tc = 25 oC

ID

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

June 1998

Value

Unit

500

V

500

V

± 30

V

38

A

24

A

152

A

400

W

3.2

W/oC

4.5

-65 to 150

150

(1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

V/ns

oC

oC

1/8

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