STE38NB50F 查看數據表（PDF） - STMicroelectronics
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STE38NB50F Datasheet PDF : 8 Pages
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STE38NB50F
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature F or Soldering
Pu r pos e
Max
Max
Typ
0.31
30
0. 1
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
38
1200
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ. Max.
10
100
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 19 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
3
Typ.
4
0.11
Max.
5
0.14
Unit
V
Ω
38
A
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 19 A
Min.
Typ.
27
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
5900
pF
880
pF
80
pF
2/8
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