STTH602CSF 查看數據表（PDF） - STMicroelectronics
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STTH602CSF Datasheet PDF : 10 Pages
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STTH602CSF
Characteristics (curves)
Figure 7. Reverse recovery charges versus dIF/dt (typical Figure 8. Reverse recovery softness versus dIF/dt (typical
values, per diode)
values, per diode)
QRR (nC)
120
100
VR = 160 V
Tj = 125 °C
IF = IF(AV)
80
S FACTOR
0.6
0.5
VR = 160 V
Tj = 125 °C
IF = IF(AV)
0.4
60
0.3
40
0.2
20
0
0
0.1
dIF/dt(A/µs)
0.0
100
200
300
400
500
0
dIF/dt(A/µs)
100
200
300
400
500
Figure 9. Relative variations of dynamic parameters
versus junction temperature
1.6
SFACTOR
1.2
VR = 160 V
IF = IF(AV)
Reference: Tj = 125 °C
Figure 10. Junction capacitance versus reverse voltage
applied (typical values, per diode)
C(pF)
100
F = 1 MHz
Vosc= 30 mVRMS
Tj = 25 °C
0.8
0.4
0.0
25
IRM
QRR
50
75
10
100
125
1
1
VR(V)
10
100
1000
Figure 11. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy
printed board FR4, eCu = 70 µm) (PSMC (TO-277A))
Rth(j-a)(°C/W)
120
Epoxy printed circuit board, copper thickness = 70 µm
PSMC (TO-277A)
100
80
60
40
20
SCU(cm²)
0
0
1
2
3
4
5
6
7
8
9
10
DS13550 - Rev 1
page 5/10
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