PUMZ1G-AL6-R(2010) 查看數據表（PDF） - Unisonic Technologies
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PUMZ1G-AL6-R Datasheet PDF : 4 Pages
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PUMZ1
Preliminary
NPN/PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Per Transistor; For The PNP Transistor With Negative Polarity
Collector- Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (DC)
IC
100
mA
Peak Collector Current
ICM
200
mA
Peak Base Current
IBM
200
mA
Total Power Dissipation
TA ≤ 25°C
TA ≤ 25°C (Note2)
PD
200
mW
300
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Ambient Operating Temperature
TOPR
-65 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on an FR4 printed-circuit board.
THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient
θJA
Note: Device mounted on an FR4 printed-circuit board.
RATINGS
416
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified.)
UNIT
K/W
PARAMETER
SYMBOL
TEST CONDITIONS
Per Transistor; For The PNP Transistor With Negative Polarity
Collect Cut-off Current
ICBO
VCB =30V, IE =0
VCB =30V, IE =0, TJ =150°C
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage(Note)
IEBO
hFE
VCE(SAT)
VEB =4V, IC =0
VCE =6V, IC =1mA
IC =50mA, IB =5mA
Collector Capacitance
TR1
TR2
CC IE =ie = 0; VCB =12V; f = 1MHz
Transition Frequency
fT
VCE =12V, IC =2mA, f =100MHz
Note 1. Pulse test: tP ≤ 300 μs; δ ≤ 0.02.
MIN TYP MAX UNIT
100 nA
10 μA
100 nA
120
200 mV
1.5 pF
2.2 pF
100
MHZ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-011.a
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