PSMN070-200P 查看數據表（PDF） - Philips Electronics

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PSMN070-200P

N-channel TrenchMOS(TM) transistor

Philips Electronics 

Philips Semiconductors

Product specification

N-channel TrenchMOS(TM) transistor PSMN070-200B; PSMN070-200P

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

EAS

Non-repetitive avalanche Unclamped inductive load, IAS = 35 A;

energy

tp = 100 µs; Tj prior to avalanche = 25˚C;

VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer

to fig:15

IAS

Non-repetitive avalanche

current

MIN.

-

MAX.

462

UNIT

mJ

-

35

A

THERMAL RESISTANCES

SYMBOL PARAMETER

Rth j-mb

Rth j-a

Thermal resistance junction

to mounting base

Thermal resistance junction

to ambient

CONDITIONS

SOT78 package, in free air

SOT404 package, pcb mounted, minimum

footprint

TYP.

-

60

50

MAX.

0.6

-

-

UNIT

K/W

K/W

K/W

ELECTRICAL CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

V(BR)DSS

VGS(TO)

RDS(ON)

IGSS

IDSS

Qg(tot)

Qgs

Qgd

td on

tr

td off

tf

Ld

Ld

Ls

Drain-source breakdown

voltage

Gate threshold voltage

Drain-source on-state

resistance

Gate source leakage current

Zero gate voltage drain

current

Total gate charge

Gate-source charge

Gate-drain (Miller) charge

VGS = 0 V; ID = 0.25 mA;

VDS = VGS; ID = 1 mA

VGS = 10 V; ID = 17 A

VGS = ±10 V; VDS = 0 V

VDS = 200 V; VGS = 0 V;

Tj = -55˚C

Tj = 175˚C

Tj = -55˚C

Tj = 175˚C

Tj = 175˚C

ID = 35 A; VDD = 160 V; VGS = 10 V

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

VDD = 100 V; RD = 2.7 Ω;

VGS = 10 V; RG = 5.6 Ω

Resistive load

Internal drain inductance

Internal drain inductance

Internal source inductance

Measured from tab to centre of die

Measured from drain lead to centre of die

(SOT78 package only)

Measured from source lead to source

bond pad

Ciss

Input capacitance

Coss

Output capacitance

Crss

Feedback capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz

MIN. TYP. MAX. UNIT

200 -

-

V

178 -

-

V

2.0 3.0 4.0 V

1.0 -

-

V

-

-

6V

- 60 70 mΩ

-

- 203 mΩ

-

2 100 nA

- 0.05 10 µA

-

- 500 µA

- 77 - nC

- 16 - nC

- 28 - nC

- 22 - ns

- 100 - ns

- 80 - ns

- 90 - ns

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- 4570 - pF

- 370 - pF

- 160 - pF

August 1999

3

Rev 1.000

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