PMBFJ308 查看數據表（PDF） - Philips Electronics
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PMBFJ308 Datasheet PDF : 12 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PMBFJ308; PMBFJ309;
PMBFJ310
handboIDok,2h0alfpage
(mA)
16
12
8
4
0
0
4
MCD218
VGS = 0 V
−0.25 V
−0.5 V
−0.75 V
−1 V
8
12
16
VDS (V)
handboIDok,2h0alfpage
(mA)
16
MCD215
12
8
4
0
−2
−1.5
−1
−0.5
0
VGS (V)
Tj = 25 °C.
Fig.9 Typical output characteristics; PMBFJ309.
VDS = 10 V; Tj = 25 °C.
Fig.10 Typical transfer characteristics; PMBFJ309.
handbook,4h0alfpage
ID
(mA)
30
20
10
0
0
4
MCD217
VGS = 0 V
−0.5 V
−1 V
−1.5 V
−2 V
−2.5 V
8
12
16
VDS (V)
40
handbook, halfpage
ID
(mA)
30
MCD214
20
10
0
−4
−3
−2
−1
0
VGS (V)
Tj = 25 °C.
Fig.11 Typical output characteristics; PMBFJ310.
VDS = 10 V; Tj = 25 °C.
Fig.12 Typical transfer characteristics; PMBFJ310.
1996 Sep 11
7
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