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M41T256YMT7 查看數據表(PDF) - STMicroelectronics

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产品描述 (功能)
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M41T256YMT7
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M41T256YMT7 Datasheet PDF : 27 Pages
First Prev 21 22 23 24 25 26 27
Figure 17. Power Down/Up Mode AC Waveforms
VCC
VPFD (max)
VPFD (min)
VSO
tF
tFB
tRB
tDR
INPUTS
RECOGNIZED
DON'T CARE
M41T256Y
tR
tREC
RECOGNIZED
RST
OUTPUTS
VALID
(PER CONTROL INPUT)
HIGH-Z
VALID
(PER CONTROL INPUT)
AI04757
Table 10. Power Down/Up AC Characteristics
Symbol
Parameter(1)
Min
Typ
Max
Unit
tF(2)
VPFD (max) to VPFD (min) VCC Fall Time
300
µs
tFB(3)
VPFD (min) to VSS VCC Fall Time
10
µs
tR
VPFD (min) to VPFD (max) VCC Rise Time
10
µs
tRB
VSS to VPFD (min) VCC Rise Time
1
µs
tREC
Power up Deselect Time
40
200
ms
tDR
Expected Data Retention Time (OSC On, Sleep Mode
Off)
15(4)
YEARS
Note: 1. Valid for Ambient Operating Temperature: TA = –25 to 70°C; VCC = 4.5 to 5.5V (except where noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-
es VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
4. At 25°C and VCC = 0V, using a BR2330 Li Battery. This drops to 7.2 years when using the M4T32-BR12SH with the oscillator run-
ning.
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