1T362A 查看數據表（PDF） - Sony Semiconductor
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1T362A Datasheet PDF : 4 Pages
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1T362A
Diode capacitance vs. Reverse voltage
20
Ta=25°C
f=1MHz
10
5
2
1
1
2
5 10
20
Reverse voltage (V)
Diode capacitance vs. Ambient temperature
f=1MHz
1.03
VR=1V
VR=2V
1.02
1.01
VR=10V
1.00
VR=25V
0.99
0.98
–20
0
20 40
60 80 100
Ta-Ambient temperature (°C)
Thermal coefficient of diode capacitance
1000
f=1MHz
Reverse voltage vs. Ambient temperature
50
IR=10µA
40
30
–20
0
20
40
60
80
Ta-Ambient temperature (°C)
Reverse current vs. Ambient temperature
1000
VR=28V
100
10
1
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
Reverse current vs. Reverse voltage
100
Ta=60°C
Ta=25°C
100
10
10
1
10
30
1
1
VR-Reverse voltage (V)
—3—
10
100
VR-Reverse voltage (V)
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