Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
CEP80N15 查看數據表(PDF) - Unspecified
零件编号
产品描述 (功能)
生产厂家
CEP80N15
N-Channel MOSFET uses advanced trench technology
Unspecified
CEP80N15 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
CEP80N15
Drain-Source Diode Characteristics
V
SD
Source-Drain Diode Forward Voltage V
GS
=0V,I
S
=50A
---
0.9
1.3
V
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
I
F
=50A, dI/dt=100A/µ
---
70
---
NS
s
---
233
---
NC
Typical Characteristics
:
(T
C
=25
℃
unless otherwise noted)
*& L .#,.#
H
B
# * #*
9.0V
10V
8.0V
7.0 V
E
C
V
GS
=6.0V
E
A
B
V
DS
(V)
*& HL ! $ " + * .
; # $%# &
H
#!
V
GS
=10V
*& L
/
V
DS
=5V
# * #*
150°C
25°C
H
E
A
C
B
V
GS
(V)
*& EL ! $ " ; # $%# &
B
I
D
=50A
A
E
F
B
E
B
A
I
D
(A)
B
A
25°C
E
A
C
B
F
V
GS
(V)
www.doingter.cn
—
3
—
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]