LR130ATM 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
零件编号
产品描述 (功能)
生产厂家
LR130ATM Datasheet PDF : 7 Pages
| |||
LR130ATM
N-Channel 100 V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
0.114 at VGS = 10 V
ID (A)
15
TO-252
D
G
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
GD S
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
100
± 20
15
13
40
3
3
18
96b
3a
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
V
A
mJ
W
°C
Unit
°C/W
E-mail：China@VBsemi TEL:86-755-83251052
1
Share Link: 