LL024N 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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LL024N Datasheet PDF : 6 Pages
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LL024N
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
1400
www.VBsemi.tw
0.06
0.05
0.04
0.03
VGS = 4.5 V
VGS = 10 V
0.02
0.01
0
8
16
24
32
40
ID - Drain Current (A)
On-Resistance vs. Drain Current
1200
Ciss
1000
800
600
400
Coss
200
Crss
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
10
ID = 6.0 V
8
6
VDS = 30 V
4
2
0
0
4
8
12
16
20
Qg - Total Gate Charge (nC)
Gate Charge
50
2.2
ID = 6.0 A
2.0
1.8
VGS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.06
0.05
TJ = 175 °C
TJ = 25 °C
10
0.04
ID = 6.0 A
0.03
0.02
0.01
1
0.00
0.5
1.0
1.5
2.0
2.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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