STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Electrical characteristics
Symbol
Parameter
td (v)
tr (v)
tf (i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 7. Switching times
Test conditions
VDD = 400 V, ID = 18 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
Min. Typ. Max. Unit
-
59
- ns
-
8.7
- ns
-
7.5
- ns
-
12
- ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
-
ISDM (1) Source-drain current (pulsed)
-
VSD (2) Forward on voltage
ISD = 28 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
ISD = 28 A, di/dt = 100 A/µs
-
VDD = 100 V (see Figure 22)
-
trr
Reverse recovery time
ISD = 28 A, di/dt = 100 A/µs
-
Qrr Reverse recovery charge
VDD = 100 V, Tj = 150 °C
-
IRRM Reverse recovery current
(see Figure 22)
-
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
28 A
112 A
1.5 V
350
ns
5.6
µC
32
A
422
ns
7.4
µC
35
A
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