2SK4082-S17-AY 查看數據表（PDF） - NEC => Renesas Technology
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2SK4082-S17-AY Datasheet PDF : 7 Pages
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SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
10
IAS = 2 A
1
EAS = 240 mJ
VDD = 150 V
RG = 25 Ω
VGS = 20 → 0 V
Starting Tch = 25°C
0.1
0.01 0.1
1
10 100
L - Inductive Load - H
1000
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
10.0±0.3
4.7±0.2
3.2±0.2
2.54±0.2
2SK4082
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 150 V
100
RG = 25 Ω
VGS = 20 → 0 V
80
IAS ≤ 2 A
60
40
20
0
25
50
75 100 125 150
Starting Tch - Starting Channel Temperature - °C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
1.47 MAX
0.8±0.2
2.54 TYP.
2.76±0.2
0.50±0.1
2.54 TYP.
1 23
1. Gate
2. Drain
3. Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the
device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate
it once, when it has occurred.
6
Data Sheet D18786EJ1V0DS
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