1EDF5673KXUMA1 查看數據表（PDF） - Infineon Technologies
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1EDF5673KXUMA1 Datasheet PDF : 39 Pages
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1EDF5673K, 1EDF5673F, 1EDS5663H
GaN gate driver
Electrical characteristics
4.3
Operating range
Table 5 Operating range
Parameter
Symbol
Min.
Input supply voltage
VDDI
3
Output supply voltage
VDDO
6.5
VDDI blocking capacitance
CVDDI
–
Resistor defining t1
Rt1
3
Logic input voltage at pins
VIN
0
PWM and DISABLE
Voltage at pins SLDO
VSLDO
0
Junction temperature
TJ
-40
Ambient temperature
TA
-40
1) for CoolGaN™ HEMTs VDDO < 12 V is recommended
2) continuous operation above 125°C may reduce lifetime
Values
Typ.
–
8
–
18
–
–
–
–
Unit Note or
Max.
Test Condition
3.5 V
SLDO inactive (N.C. or
connected to VDDI)
201) V
Min. defined by UVLO
22 nF SLDO active
(connected to GNDI)
45 kΩ –
6.5 V
–
3.5 V
–
1502) °C
125 °C –
4.4
Electrical characteristics
Unless otherwise noted, min./max. values of characteristics are the lower and upper limits, respectively. They are
valid within the full operating range. Typical values are given at TJ = 25°C with VDDI = 3.3 V and VDDO = 8 V
Table 6 Power supply
Parameter
Symbol
VDDI quiescent current
VDDO quiescent current
IVDDIqu
IVDDOqu
Values
Unit Note or
Min.
Typ.
Max.
Test Condition
–
1.5
– mA no switching
–
1.3
– mA no switching
Table 7 Static output characteristics
Parameter
Symbol
Values
Unit Note or
Min.
Typ.
Max.
Test Condition
High level (sourcing) output
resistance
Ron_SRC
0.42
0.85
1.6 Ω
ISRC = 50 mA
Peak sourcing output current ISRC_pk
–
4
1)
A
–
Low level (sinking) output
resistance
Ron_SNK
0.18
0.35
0.75 Ω
ISNK = 50 mA
Peak sinking output current ISNK_pk
2)
-8
–A
–
1) actively limited to approx. 5.2 Apk, not subject to production test - verified by design / characterization
2) actively limited to approx. -10.2 Apk, not subject to production test - verified by design / characterization
Final datasheet
15
Rev. 2.3
2020-10-22
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