1EDF5673KXUMA1 查看數據表（PDF） - Infineon Technologies

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1EDF5673KXUMA1

GaN EiceDRIVER™ product family

Infineon Technologies 

1EDF5673K, 1EDF5673F, 1EDS5663H

GaN gate driver

Electrical characteristics

Table 8 Dynamic characteristics, TJ,max = 125°C (see Figure 7 and Figure 8)

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

PWM to OUTS propagation

delay

PWM to OUTG propagation

delay

tPDonS

tPDoffS

tPDonG

tPDoffG

31

37

–

41

–

tPDoffS + t1

31

37

44 ns

–

– ns

44 ns

DISABLE to OUTS propagation tPD_DISon

–

–

100 ns

delay

tPD_DISoff

Rise time OUTS / OUTG

trise

–

6.5

121) ns

Fall time OUTS

tfall

–

Minimum input pulse width tPW

–

that changes output state

Duration of negative gate “off” t1

–

voltage

Minimum “off” time before t2

–

entering “first pulse” mode

Discharging time in “first

t3

–

pulse” mode

1) verified by design, not tested in production

4.5

81)

ns

18

– ns

194

– ns

321)

– µs

201)

– ns

Note or Test Condition

load between OUTS and

GNDS

CLS = 1.8 nF

load between OUTG and

GNDG

ZLG = 1.8 nF // 20 Ω

CLS = 1.8 nF

CLS = CLG = 1.8 nF,

10% to 90%

CLS = 1.8 nF, 90% to 10%

–

Rt1 = 18 kΩ

–

–

Table 9 Undervoltage Lockout

Parameter

Symbol

Undervoltage Lockout input

(UVLOin) turn on threshold

UVLOin

Undervoltage Lockout (UVLOin) UVLOin-

turn off threshold

UVLOin threshold hysteresis

Undervoltage Lockout outputs

(UVLOoutG/S) turn on threshold

UVLOout turn off thresholds

UVLOout threshold hysteresis

∆UVLOin

UVLOoutG

UVLOoutS

UVLOoutG-

UVLOoutS-

∆UVLOoutG

∆UVLOoutS

Min.

2.75

–

0.1

4.7

5.4

–

–

0.3

0.4

Values

Typ.

2.85

2.7

0.15

5.0

5.8

4.5

5.2

0.45

0.6

Max.

2.95

Unit Note or

Test Condition

V

–

–V

–

0.2 V

–

5.3 V

–

6.2 V

–

–V

–

–V

–

0.6 V

–

0.8 V

–

Final datasheet

16

Rev. 2.3

2020-10-22

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