2EDF7275F(2018) 查看數據表（PDF） - Infineon Technologies

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2EDF7275F
(Rev.:2018)

Fast, robust, dual-channel, functional isolated MOSFET gate drivers with accurate and stable timing

Infineon Technologies 

Product brief

EiceDRIVER™ 2EDF7275F and 2EDF7175F

Fast, robust, dual-channel, functional isolated MOSFET gate drivers

with accurate and stable timing

Overview

The EiceDRIVER™ 2EDF7275F is the perfect fit for robust and stable operation for primary

side control of high- and low-side MOSFETs in noisy high-power switching environments.

The strong 4 A/8 A source/sink dual-channel gate drivers provide a fast turn on/off

when driving high- and medium-voltage MOSFETs such as CoolMOS™ or OptiMOS™.

Both output channels are individually isolated and can be flexibly deployed as floating

gate drivers with very high 150 V/ns CMTI (Common Mode Noise Immunity). The VDDi

input supply supports a wide voltage range SLDO mode to save on-board LDOs. For

slower switching or driving smaller MOSFETs, a 1 A/2 A peak current product variant,

the EiceDRIVER™ 2EDF7175F, is available in the DSO-16 narrow body package with 4 mm

creepage distance.

Device overview

VDDI

SLDON

INA

INB

UVLO

SLDO

TX

Control

logic

DISABLE

NC

GNDI

TX

Dceoandttrioml e

UVLO

RX

Logic

VDDA

OUTA

Channel-to-channel

isolation

UVLO

RX

Logic

GNDA

VDDB

OUTB

GNDB

EiceDRIVER™ 2EDF7275F and 2EDF7175F

block diagram

Product key features

Fast power switching with accurate timing

›› Available with 4 A/8 A and 1 A/2 A source/sink currents

›› Propagation delay typ. 37 ns with 3 ns

channel-to-channel mismatch

›› Max. delay variation ~14 ns

Optimized for area and low cost system BOM

›› Isolation and driver in one package

›› Less power dissipation due to low on-resistance

›› Output stages with 5 A reverse current capability

Robust against switching noise

›› Floating drivers are able to handle large inductive

voltage over- and undershoots

›› Very high common mode transient immunity

CMTI > 150 V/ns

›› Undervoltage lockout function for switch protection

Output-to-output channel isolation

›› Functional level galvanic isolation

Input-to-output channel isolation

›› Functional galvanic isolation

Product benefits

Power efficiency and high resolution PWM control

›› Lower switching losses in half-bridges due to fast

and accurate turn on/off

›› Perfect match for a new digitally controlled high

resolution PWM control

Cooler package at smaller form factor

›› Replaces classic bulky PT pulse transformers or

costly high speed data couplers and discrete drivers

›› Cooler gate driver package

›› Eliminates need for two costly protection diodes

Protection and safe operation

›› Protection against shoot-through (EOS)

›› Supports decoupling and limits the di/dt

switching and ringing noise

›› Reliable CT coreless transformer PWM signal chain

Flexible assignment of any driver channel

›› HS+LS, HS+HS, LS+LS or 2x Imax on 1xHS

Floating gate drive and regulatory safety

›› Functional isolation for primary or secondary

side control

System benefits

Enabling higher power stage efficiency and higher

power density designs

Improving long term competitive cost position,

integration and mass manufacturability

Improved end-product lifetime by improved safe

operation of power switches

Lower EMI by ground isolation, driver proximity to

MOSFETs or the use of 4-pin Kelvin source MOSFETs

Meeting requirements to build isolated AC-DC,

DC-DC half-bridge topologies

www.infineon.com/2EDi

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