SI3586DV-T1-E3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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SI3586DV-T1-E3 Datasheet PDF : 10 Pages
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SI3586DV-T1-E3
N- and P-Channel 20V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
20
- 20
RDS(on) (Ω)
0.024 at VGS = 10 V
0.036 at VGS = 4.5 V
0.069 at VGS = - 10 V
0.083 at VGS = - 4.5 V
ID (A)
5.5
4.2
- 3.4
- 2.5
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
TSOP-6
Top View
G1
1
6
D1
3 mm S2
2
5
S1
G2
3
4
D2
2.85 mm
D1
S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
20
- 20
Gate-Source Voltage
VGS
± 20
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
ID
5.5
- 3.4
4.0
- 2.3
Pulsed Drain Current
IDM
15
10
Continuous Source Current (Diode Conduction)a, b
IS
1.05
- 1.05
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
PD
1.15
0.73
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t≤5s
Steady State
Maximum Junction-to-Lead
Steady State
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
Symbol
RthJA
RthJL
Typical
93
130
75
Maximum
110
150
90
Unit
V
A
W
°C
Unit
°C/W
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