SI4431CDY-T1-E3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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SI4431CDY-T1-E3 Datasheet PDF : 9 Pages
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SI4431CDY-T1-E3
P-Channel 30-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.018 at VGS = - 10 V
0.024 at VGS = - 4.5 V
ID (A)d
- 9.0
- 7.8
Qg (Typ.)
13 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Load Switch
• Battery Switch
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 30
± 20
- 9.0
- 7.2
- 7.0a, b
- 5.6a, b
- 30
- 3.5
- 2.1a, b
4.2
2.7
2.5a, b
1.6a, b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 95 °C/W.
d. Based on TC = 25 °C.
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
40
24
Maximum
50
30
Unit
V
A
W
°C
Unit
°C/W
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