2SA1302 查看數據表（PDF） - New Jersey Semiconductor
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2SA1302 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA1302
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA ; IB= 0
-200
V
VcE(sat)
Collector-Emitter Saturation Voltage lc= -10A; IB= -1A
Vee(on) Base-Emitter On Voltage
lc= -8A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -200V ; IE= 0
-3.0
V
-1.5
V
-5
UA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-5
MA
hpE-1
DC Current Gain
lc=-1A;VcE=-5V
55
160
hFE-2
DC Current Gain
lc= -8A ; VCE= -5V
35
COB
Output Capacitance
IE= 0;VCB= -10V;ftest= 1.0MHz
470
PF
fr
Current-Gain—Bandwidth Product
lc=-1A;VCE=-5V
25
MHz
• hpE-1 Classifications
R
0
55-110 80-160
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