AO4405 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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AO4405 Datasheet PDF : 8 Pages
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AO4405
www.VBsemi.tw
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.7
- 2.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 70 °C
-1
µA
-5
On-State Drain Currentb
ID(on)
VDS ≤ - 10 V, VGS = - 10 V
VDS ≤ - 5 V, VGS = - 4.5 V
- 20
-5
A
VGS = - 10 V, ID = - 5.8 A
0.033 0.042
Drain-Source On-State Resistanceb
RDS(on)
VGS = - 6 V, ID = - 5 A
0.043 0.055
Ω
VGS = - 4.5 V, ID = - 4.4 A
0.056 0.060
Forward Transconductanceb
gfs
VDS = - 15 V, ID = - 5.8 A
13
S
Diode Forward Voltageb
VSD
IS = - 2.3 A, VGS = 0 V
- 0.8
- 1.1
V
Dynamica
Total Gate Charge
Qg
16
24
Gate-Source Charge
Qgs
VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A
2.3
nC
Gate-Drain Charge
Qgd
4.5
Gate Resistance
Rg
8.8
Ω
Turn-On Delay Time
td(on)
14
25
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
14
25
42
70
ns
Fall Time
tf
30
50
Source-Drain Reverse Recovery Time
trr
IF = - 1.2 A, dI/dt = 100 A/µs
30
60
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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