MCNA220PD2200YB 查看數據表（PDF） - IXYS CORPORATION
零件编号
产品描述 (功能)
生产厂家
MCNA220PD2200YB Datasheet PDF : 5 Pages
| |||
MCNA220PD2200YB
Thyristor
500
400
300
IT
200
[A]
100
TVJ = 125°C
TVJ = 25°C
0
0.0
0.5
1.0
1.5
VT [V]
Fig. 1 Forward characteristics
6000
5000
ITSM
4000
[A]
3000
50 Hz, 80% VRRM
TVJ = 45°C
TVJ = 140°C
3x105
VR = 0 V
2x105
2x105
I2t
2x105
[A2s]
1x105
8x104
TVJ = 45°C
TVJ = 140°C
2000
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
ITSM: crest value, t: duration
4x104
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time (1-10 s)
100
100.0
350
10
VG
tp = 30 µs
tp = 500 µs
PGM = 120 W
60 W
PGAV = 8 W
[V]
10.0
tgd
[µs]
TVJ = 125°C
lim.
300
250
IT(AV)M
200
[A]
150
dc =
1
0.5
0.4
0.33
0.17
0.08
1
0.1
0.01
IGT (TVJ = -40°C)
IGT (TVJ = 0°C)
IGT (TVJ = 25°C)
IGD
0.1
1
10
IG [A]
Fig. 4 Gate voltage & gate current
1.0
typ.
0.1
0.01
0.10
1.00
IG [A]
10.00
Fig. 5 Gate controlled delay time tgd
100
50
0
0
40
80 120 160
Tcase [°C]
Fig. 6 Max. forward current at
case temperature
400
300
Ptot
200
dc =
1
0.5
0.4
0.33
0.17
0.08
[W]
100
RthHA
0.1
0.2
0.4
0.6
0.8
1.0
i Rthi (K/W)
0.12 1 0.0100
2 0.0650
3 0.0250
4 0.0615
0.08 5
ZthJC
0.0270
ti (s)
0.00014
0.01900
0.18000
0.52000
1.60000
[K/W]
0.04
0
0 80 160 240 0
IT(AV) [A]
40
80 120
Tamb [°C]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0.00
1
10
100
1000
10000
t [ms]
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160718a
Share Link: 