CMT01N60XN251(2010) 查看數據表（PDF） - Champion Microelectronic
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CMT01N60XN251 Datasheet PDF : 7 Pages
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ORDERING INFORMATION
Part Number
CMT01N60GN251
CMT01N60XN251*
CMT01N60GN92
CMT01N60XN92*
*Note: G : Suffix for Pb Free Product
X : Suffix for Halogen Free Product
Package
TO-251
TO-251
TO-92
TO-92
CMT01N60
POWER FIELD EFFECT TRANSISTOR
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr =- 30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.5A) *
TO-251
TO-92
Forward Transconductance (VDS ≧ 50 V, ID = 0.5A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 300 V, ID = 1.0 A,
VGS = 10 V,
RG = 18Ω) *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 1.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond
pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 1.0 A, VGS = 0 V,
dIS/dt = 100A/μs)
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
VSD
ton
trr
CMT01N60
Min
Typ
Max
600
Units
V
1
uA
3
100
nA
100
nA
V
2.0
4.0
11
Ω
320
mhos
210
pF
28
pF
4.2
pF
8
ns
21
ns
18
ns
24
ns
8.5
nC
1.8
nC
4
nC
4.5
nH
7.5
nH
1.5
V
**
ns
350
ns
2010/12/01 Rev. 1.7
Champion Microelectronic Corporation
Page 2
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