NE350184C-T1A-A 查看數據表（PDF） - California Eastern Laboratories.

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NE350184C-T1A-A

HETERO JUNCTION FIELD EFFECT TRANSISTOR

California Eastern Laboratories. 

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE350184C

K-BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

FEATURES

• Super low noise figure and high associated gain

NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz

• Micro-X ceramic (84C) package

APPLICATIONS

• 20 GHz-band DBS LNB

• Other K-band communication systems

ORDERING INFORMATION

Part Number

Order Number

Package

NE350184C-T1 NE350184C-T1-A 84C (Pb-Free)

NE350184C-T1A NE350184C-T1A-A

Quantity

1 kpcs/reel

5 kpcs/reel

Marking

Supplying Form

A

• 12 mm wide embossed taping

• Pin 4 (Gate) faces the perforation side

of the tape

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE350184C

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

Symbol

Ratings

Unit

VDS

4

V

VGS

−3

V

ID

IG

Ptot Note

IDSS

80

165

mA

µA

mW

Tch

+150

°C

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PG10584EJ01V0DS (1st edition)

Date Published November 2005 CP(K)

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