SSM2250RMZ-R2 查看數據表（PDF） - Analog Devices
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SSM2250RMZ-R2 Datasheet PDF : 12 Pages
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SPECIFICATIONS
ELECTRICAL CHARACTERISTICS, VS = 5.0 V
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
Symbol
Conditions
DEVICE CHARACTERISTICS
Output Offset Voltage
VOS
BTL mode; AV = 2; BTL+ to BTL−
Large Signal Voltage Gain
AVO
RL = 2 kΩ
Output Power
POUT
SE mode: RL = 32 Ω, THD < 1%
BTL mode: RL = 8 Ω, THD < 1%
Output Impedance
ZOUT
SHUTDOWN INPUT
Input Voltage High
VIH
IS < 100 μA
Input Voltage Low
VIL
IS > 1 mA
POWER SUPPLY
Supply Current
IS
BTL mode
SE mode
Supply Current/Amplifier
IS
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 100 kΩ, CL = 50 pF
Gain Bandwidth Product
GBP
Phase Margin
Фo
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
ELECTRICAL CHARACTERISTICS, VS = 2.7 V
VS = 2.7 V, VCM = 1.35 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
Symbol Conditions
DEVICE CHARACTERISTICS
Output Offset Voltage
VOS
BTL mode; AV = 2; BTL+ to BTL−
Large Signal Voltage Gain
AVO
RL = 2 kΩ
Output Power
POUT
SE mode: RL = 32 Ω, THD < 1%
BTL mode: RL = 8 Ω, THD < 1%
Output Impedance
ZOUT
SHUTDOWN INPUT
Input Voltage High
VIH
IS < 100 μA
Input Voltage Low
VIL
IS > 1 mA
POWER SUPPLY
Supply Current
IS
BTL mode
SE mode
Supply Current/Amplifier
IS
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 100 kΩ, CL = 50 pF
Gain Bandwidth Product
GBP
Phase Margin
Фo
NOISE PERFORMANCE
Voltage Noise Density
en
f = 1 kHz
SSM2250
Min Typ
Max Unit
4
100
2
90
1,000
0.1
mV
V/mV
mW
mW
Ω
2.0
V
0.8
V
6.4
mA
6.4
mA
60
μA
4
V/μs
4
MHz
84
Degrees
45
nV/√Hz
Min Typ Max Unit
4
100
2
25
300
0.1
mV
V/mV
mW
mW
Ω
2.0
V
0.8
V
6.4
mA
6.4
mA
32
μA
4
V/μs
4
MHz
84
Degrees
45
nV/√Hz
Rev. A | Page 3 of 12
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