FDN304P(2000) 查看數據表（PDF） - Fairchild Semiconductor

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FDN304P
(Rev.:2000)

P-Channel 1.8V Specified PowerTrench® MOSFET

Fairchild Semiconductor 

June 2000

PRELIMINARY

FDN304P

P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –2.4 A, –20 V.

RDS(ON) = 0.052 Ω @ VGS = –4.5 V

RDS(ON) = 0.070 Ω @ VGS = –2.5 V

RDS(ON) = 0.100 Ω @ VGS = –1.8 V

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

• SuperSOTTM -3 provides low RDS(ON) and 30% higher

power handling capability than SOT23 in the same

footprint

D

D

S

SuperSOT TM-3

G

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

VGSS

ID

PD

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

Maximum Power Dissipation

(Note 1a)

(Note 1a)

(Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJC

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

.304

FDN304P

7’’

G

S

Ratings

–20

±8

–2.4

–10

0.5

0.46

-55 to +150

250

75

Tape width

8mm

Units

V

V

A

W

°C

°C/W

°C/W

Quantity

3000 units

2000 Fairchild Semiconductor Corporation

FDN304P Rev B(W)

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