STD4NB25 查看數據表（PDF） - STMicroelectronics

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STD4NB25

N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAK PowerMESH™ MOSFET

STMicroelectronics 

®

STD4NB25

N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAK

PowerMESH™ MOSFET

PRELIMINARY DATA

TYPE

VDSS

RDS(on)

ID

STD4NB25

250 V < 1.1 Ω

4A

ν TYPICAL RDS(on) = 0.95 Ω

ν EXTREMELY HIGH dv/dt CAPABILITY

ν 100% AVALANCHE TESTED

ν VERY LOW INTRINSIC CAPACITANCES

ν GATE CHARGE MINIMIZED

ν FOR TROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

IPAK

TO-251

(Suffix "-1")

3

3

2

1

1

DPAK

TO-252

(Suffix "T4")

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

ν SWITCH MODE POWER SUPPLIES (SMPS)

ν DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

VDGR

VGS

ID

ID

IDM(•)

Ptot

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

February 2000

Value

250

250

± 30

4

2.5

16

40

0.32

5.5

-65 to 150

150

(1) ISD ≤4 Α, di/dt â 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Unit

V

V

V

A

A

A

W

W/oC

V/ns

oC

oC

1/6

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