STB70NFS03L 查看數據表（PDF） - STMicroelectronics
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STB70NFS03L
STMicroelectronics
STB70NFS03L Datasheet PDF : 13 Pages
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STB70NFS03L
1
Electrical ratings
Table 1. Mosfet absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC = 100°C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (2) Peak diode recovery voltage slope
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
TJ Operating junction temperature
1. Pulse width limited by safe operating area
2. ISD < 70A, di/dt < 350A/µs, VDD = 80% V(BR)DSS
3. Starting Tj = 25°C, VDD = 25V
Table 2. Schottky absolute maximum ratings
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward current
TL=125°C
δ=0.5
tp=10ms
IFSM Surge non repetitive forward current Sinusoidal
dv/dt Critical rate of rise of reverse voltage
Table 3. Thermal data
Symbol
Parameter
Rthj-amb Thermal resistance junction-amb max
Rthj-case Thermal resistance junction-case max
Tl Maximum lead temperature for soldering purpose
Electrical ratings
Value
30
± 18
70
50
280
100
0.67
5.5
500
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
30
20
3
75
10000
Value
1.5
62.5
300
Unit
V
A
A
A
v/µs
Unit
°C/W
°C/W
°C
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