P4NM60 查看數據表（PDF） - STMicroelectronics
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P4NM60
STMicroelectronics
P4NM60 Datasheet PDF : 12 Pages
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STP4NM60 / STD3NM60 / STD3NM60-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tj
Operating Junction Temperature
Tstg
Storage Temperature
(l) Pulse width limited by safe operating area
(1) ISD ≤3A, di/dt ≤400 µA, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Value
STP4NM60
STD3NM60
STD3NM60-1
600
600
± 30
4
3
2.52
1.9
16
12
69
42
0.55
0.33
15
-65 to 150
-65 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
1.82
62.5
300
DPAK
IPAK
3
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
1.5
200
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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