2N7000RLRM(2000) 查看數據表（PDF） - ON Semiconductor

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2N7000RLRM
(Rev.:2000)

Small Signal MOSFET 200 mAmps, 60 Volts N–Channel TO–92

ON Semiconductor 

2N7000

Preferred Device

Small Signal MOSFET

200 mAmps, 60 Volts

N–Channel TO–92

MAXIMUM RATINGS

Rating

Drain Source Voltage

Drain–Gate Voltage (RGS = 1.0 MΩ)

Gate–Source Voltage

– Continuous

– Non–repetitive (tp ≤ 50 µs)

Drain Current

– Continuous

– Pulsed

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Temperature

Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to

Ambient

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case

for 10 seconds

Symbol

VDSS

VDGR

VGS

VGSM

ID

IDM

PD

TJ, Tstg

Symbol

RθJA

TL

Value

60

60

±ā20

±ā40

200

500

350

2.8

–55 to

+150

Max

357

300

Unit

Vdc

Vdc

Vdc

Vpk

mAdc

mW

mW/°C

°C

Unit

°C/W

°C

http://onsemi.com

200 mAMPS

60 VOLTS

RDS(on) = 5 Ω

N–Channel

D

G

S

TO–92

CASE 29

Style 22

123

MARKING DIAGRAM

& PIN ASSIGNMENT

2N7000

YWW

1

Source

3

Drain

2

Gate

Y

= Year

WW = Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

© Semiconductor Components Industries, LLC, 2000

1

November, 2000 – Rev. 5

Publication Order Number:

2N7000/D

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