2N7000RLRM(2000) 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

生产厂家

2N7000RLRM
(Rev.:2000)

Small Signal MOSFET 200 mAmps, 60 Volts N–Channel TO–92

ON Semiconductor 

2N7000

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10 µAdc)

Zero Gate Voltage Drain Current

(VDS = 48 Vdc, VGS = 0)

(VDS = 48 Vdc, VGS = 0, TJ = 125°C)

Gate–Body Leakage Current, Forward

(VGSF = 15 Vdc, VDS = 0)

ON CHARACTERISTICS (Note 1.)

V(BR)DSS

60

IDSS

–

–

IGSSF

–

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

Static Drain–Source On–Resistance

(VGS = 10 Vdc, ID = 0.5 Adc)

(VGS = 4.5 Vdc, ID = 75 mAdc)

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 0.5 Adc)

(VGS = 4.5 Vdc, ID = 75 mAdc)

On–State Drain Current

(VGS = 4.5 Vdc, VDS = 10 Vdc)

Forward Transconductance

(VDS = 10 Vdc, ID = 200 mAdc)

VGS(th)

0.8

rDS(on)

–

–

VDS(on)

–

–

Id(on)

75

gfs

100

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

Ciss

–

Coss

–

Crss

–

SWITCHING CHARACTERISTICS (Note 1.)

Turn–On Delay Time

(VDD = 15 V, ID = 500 mA,

ton

–

Turn–Off Delay Time

RG = 25 W, RL = 30 W, Vgen = 10 V)

toff

–

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

Max

Unit

–

Vdc

1.0

µAdc

1.0

mAdc

–10

nAdc

3.0

Vdc

Ohm

5.0

6.0

Vdc

2.5

0.45

–

mAdc

–

µmhos

60

pF

25

5.0

10

ns

10

http://onsemi.com

2

Share Link: