BF510 查看數據表（PDF） - Philips Electronics
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BF510 Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
BF510 to 513
DESCRIPTION
MARKING CODE
Asymmetrical N-channel planar
BF510 = S6p
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
BF511 = S7p
BF512 = S8p
BF513 = S9p
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
handbook, halfpage
3
the mixer stage (BF513).
PINNING - SOT23
1 = gate
2 = drain
3 = source
1
2
Top view
d
g
s
MAM385
QUICK REFERENCE DATA
Drain-source voltage
Drain current (DC or average)
Total power dissipation
up to Tamb = 40 °C
Drain current
VDS = 10 V; VGS = 0
Transfer admittance (common source)
VDS = 10 V; VGS = 0; f = 1 kHz
Feedback capacitance
VDS = 10 V; VGS = 0
VDS = 10 V; ID = 5 mA
Noise figure at optimum source admittance
GS = 1 mS; −BS = 3 mS; f = 100 MHz
VDS = 10 V; VGS = 0
VDS = 10 V; ID = 5 mA
Fig.1 Simplified outline and symbol.
VDS max.
ID
max.
Ptot max.
>
IDSS <
BF510
0.7
3.0
20
30
250
511
512
2.5
6
7.0
12
V
mA
mW
513
10 mA
18 mA
yfs >
Crs typ.
Crs typ.
2.5
4
6
7 mS
0.3
0.3
−
− pF
−
−
0.3
0.3 pF
F
typ.
F
typ.
1.5
1.5
−
− dB
−
−
1.5
1.5 dB
December 1997
2
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