BF556A 查看數據表（PDF） - Philips Electronics
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BF556A Datasheet PDF : 11 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
103
handbook, halfpage
IGSS
(pA)
102
MRC150
10
1
10−1
−50
0
50
100
150
Tj (°C)
VDS = 0; VGS = −20 V.
Fig.12 Gate current as a function of junction
temperature; typical values.
Product specification
BF556A; BF556B; BF556C
300
Ptot
(mW)
200
MRC166
100
00
50
100
Tamb
(oC) 150
Fig.13 Power derating curve.
handbCoorks, h1alfpage
(pF)
0.8
MRC134
0.6
0.4
0.2
0
–10
–8
–6
–4
–2
0
VGS (V)
handbook, ha3lfpage
C is
(pF)
2
MRC140
1
0
–10
–8
–6
–4
–2
0
VGS (V)
VDS = 15 V.
Fig.14 Reverse transfer capacitance; typical values.
VDS = 15 V.
Fig.15 Input capacitance; typical values.
1996 Jul 29
7
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