2SK3061 查看數據表（PDF） - NEC => Renesas Technology
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2SK3061 Datasheet PDF : 8 Pages
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2SK3061
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 35 A
10
EAS = 122.5 mJ
1.0
RG = 25 Ω
VDD = 30 V
VGS = 20 V → 0 V
0.1 Starting Tch = 25 °C
10 µ
100 µ
1m
L - Inductive Load - H
10 m
PACKAGE DRAWING (Unit : mm)
Isolated TO-220 (MP-45F)
10.0 ± 0.3
4.5 ± 0.2
φ 3.2 ± 0.2
2.7 ± 0.2
0.7 ± 0.1
2.54
1.3 ± 0.2
2.5 ± 0.1
1.5 ± 0.2 0.65 ± 0.1
2.54
123
1.Gate
2.Drain
3.Source
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
VDD = 30 V
140
RG = 25 Ω
VGS = 20 V → 0 V
120
IAS ≤ 35 A
100
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Body
Diode
Gate
Protection
Diode Source (S)
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6
Data Sheet D13100EJ1V0DS00
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